Work on benchmarking defect formation energies and formation energies of binary Ge-containing compounds, which are relevant for quaternary chalcogenides that are typically used for photovoltaic and thermoelectric applications, was published today in Physical Review B. The paper was written by Dr. Robert Wexler (Princeton University), Dr. Sai Gautam Gopalakrishnan and Prof. Emily A. Carter (University of California Los Angeles).