Recent work on the discovery of a new chalcogenide semiconductor, Cu2CdGeS3Se, which shows promising thermodynamic stability, optimal band gap, and robust resistance to formation of deep-trap-inducing defects, was published today in Journal of Materials Chemistry A. The paper was written by Dr. Robert Wexler (Princeton University), Dr. Sai Gautam Gopalakrishnan and Prof. Emily A. Carter (University of California Los Angeles).